发明名称 SUBSTRATE PROCESSING SYSTEM
摘要 PROBLEM TO BE SOLVED: To eliminate turbulence and stagnancy at an upstream of a gas channel connected to an inlet section so as to eliminate a local block. SOLUTION: This system includes a substrate processing chamber for processing a substrate, a heating means for heating up the substrate, a supply system for supplying an intended gas to the substrate processing chamber, an exhaust system for exhausting the atmosphere in the substrate processing chamber, and a trap device prepared in the exhaust system for solidifying and capturing a gas exhausted from the processing chamber, wherein the system has the trap main body 102, and the trap device including an inlet section 103 connected to the trap main body 102, and the trap main body 102 includes a curvature gas channel 105 inside, and at least part of the inlet section 103 is made of a bent pipe that smoothly guides a substrate processing chamber atmosphere to the gas channel 105. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007027590(A) 申请公布日期 2007.02.01
申请号 JP20050210713 申请日期 2005.07.21
申请人 HITACHI KOKUSAI ELECTRIC INC;TAISEI GIKEN CO LTD 发明人 HOTTA HIDEKI;TOYODA KAZUYUKI;SUGIHARA MASARU;NAKAGAWA TAKASHI
分类号 H01L21/31;C23C16/44 主分类号 H01L21/31
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