| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having a structure robust against misalignment in photolithography. SOLUTION: The semiconductor integrated circuit device comprises a signal electrode line BL arranged periodically, and a signal electrode line contact 13 arranged in a line at the same cycle with the signal electrode line BL in the ward line direction. The side surface of the signal electrode line BL contacts a first insulating material 14 and a second insulating material 15 laminated on the first insulating material 14. In the cross section in the word line direction, the diameter Dbtm at the part of the signal electrode line BL that contacts the signal electrode line contact 13 is smaller than the diameter Dtop at the top surface of the signal electrode line BL. COPYRIGHT: (C)2007,JPO&INPIT
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