Phase change memory device and method of manufacturing the same

摘要

Provided are a phase change memory device and a method of fabricating the same capable of maximizing a contact area of a phase change layer and a heating electrode. The memory device includes a heating electrode and a phase change layer. The heating electrode covers at least one side exposed by a pore and a portion of a surface of a lower electrode and includes a recess region. The phase change layer is stacked on the heating electrode filling up the recess region. The memory device may maximize a contact area of the phase change layer and the heating electrode, thereby greatly reducing power consumption.