| 摘要 |
<p>An electron emission device and a method for manufacturing the same are provided to form a plurality of fine holes on a gate electrode by using a bubble generation layer instead of forming an additional grid electrode or an additional focusing electrode. A cathode electrode(6) is formed on a substrate(2). An insulating layer(8) is formed on an entire surface of the substrate in order to cover the cathode electrode. An opening(8a) is formed on the insulating layer in order to expose a part of the cathode electrode. An electron emission unit(12) is formed on the exposed part of the cathode electrode. A bubble generation layer is formed on the cathode electrode and the electron emission unit. A gate electrode(10) is formed on the insulating layer and the bubble generation layer. A plurality of fine holes(10a) are formed on the gate electrode by baking the bubble generation layer. The bubble generation layer is removed therefrom.</p> |
