| 摘要 |
<P>PROBLEM TO BE SOLVED: To contrive the stabilization of forming of a memory cell diffusion mask pattern and the improvement of an yield thereof, by facilitating the formation of configuration of the memory cell diffusion mask pattern. <P>SOLUTION: A 2-bit adjacent memory cell transistor is constituted of a diffusion mask pattern 5 while the diffusion mask patterns 5 are arrayed on a memory cell array 1, and the source common wiring 8 of the memory cell formed of the diffusion mask patterns 5 is wired through a metal wiring. The memory cell diffusion mask pattern is constituted of 2-bit rectangular diffusion mask pattern, and the source common wiring is wired by the metal wiring in such a manner whereby the formation of configuration of the memory cell diffusion mask pattern is facilitated. Further, the pattern continuity of the memory diffusion mask pattern used as a real memory is maintained to improve the pattern forming accuracy of the diffusion mask pattern for the real memory, and to contrive the improvement of the yield thereof. <P>COPYRIGHT: (C)2007,JPO&INPIT |
