| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure technique inexpensively forming a fine pattern under wavelength grade of an illumination light and acquiring high alignment accuracy. <P>SOLUTION: Interference fringe patterns 92 are formed by irradiating a wafer with an illumination light through two diffraction gratings and the wafer is exposed with the interference fringe patterns 92. Before exposure, an interference fringe measurement system 41 is moved to two measurement points Q4 and Q5 spaced by a distance LX1 from each other in a direction of cycle of the interference fringe pattern 92 to measure the position of the interference fringe patterns 92 at each point, the two measurement points and the distance LX1 are used to obtain a cycle T3 of the interference fringe pattern 92, and the cycle T3 is corrected according to an elasticity rate of the wafer to be exposed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
