| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the driving voltage for a nitride semiconductor device using a silicon substrate. <P>SOLUTION: The silicon substrate (1) doped with an impurity and having a sufficient conductivity is prepared to make the nitride semiconductor device. A first nitride semiconductor layer (6) consisting of AlN is arranged only on a part of one main surface (16) of the substrate (1). A conductor layer (10) consisting of Ti or W etc. is arranged on the remainder of the one main surface (16) of the substrate (1). A second nitride semiconductor layer (7) is arranged on the first nitride semiconductor layer (6) and the conductor layer (10). The driving voltage is reduced by using the conductor layer (10) as a current passage. <P>COPYRIGHT: (C)2007,JPO&INPIT |
