| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device including a process to form a silicon dioxide film that is effective as an insulating film for isolation, using solution containing fault hydrogenation silazane polymeric. SOLUTION: This manufacturing method for a semiconductor device comprises processes of: forming a trench for isolation of an element on the front surface of a substrate including a semiconductor substrate 101; embedding the inside of the trench using solution containing silazane polymeric peroxide by applying the solution to the top of the foregoing substrate; changing the solution into a PSZ film by heating the solution; and also changing the PSZ film into a SiO<SB>2</SB>film 107. The manufacturing method further comprises processes of: heating the PSZ film at a primary temperature in steam atmosphere 106; and also heating the PSZ film heated in the steam atmosphere 104 at a secondary temperature lower than the primary temperature, in the prior process heated at the primary temperature. COPYRIGHT: (C)2007,JPO&INPIT
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