BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To increase a breakdown voltage between a base and a collector without increasing the harmonic distortion in a manufacturing method for a bipolar transistor. SOLUTION: The manufacturing method for a bipolar transistor has an SIC layer in a collector region at the lower part of an emitter region. The method includes a step for forming an SIC layer in which impurity concentration at four corners is lower than that of at the central part. COPYRIGHT: (C)2007,JPO&INPIT