发明名称 Semiconductor device
摘要 When an interlayer film ( 22 ) is formed to have a large thickness and an electrode pad ( 11 ) is partly or wholly led out from an active region ( 16 ), an I/O region ( 15 ) can be reduced in area. Thus, it is possible to reduce an area of a semiconductor device.
申请公布号 US2007023927(A1) 申请公布日期 2007.02.01
申请号 US20060487329 申请日期 2006.07.17
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAGAI NORIYUKI;HAMATANI TSUYOSHI;MIMURA TADAAKI
分类号 H01L23/48 主分类号 H01L23/48
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