| 摘要 |
A thin film transistor substrate and a method for manufacturing the same are provided to suppress the reduction of aperture ratio due to a storage capacitor, by forming the storage capacitor of two transparent conductor layers. A transparent storage capacitor conductor(133) is formed on a substrate(110). A gate line(121) is formed on the substrate. A gate insulating layer(140) is formed on the gate line. A semiconductor layer(154) is formed on the gate insulating layer. A data line(171) and a drain electrode(175) are formed on the semiconductor layer. A passivation layer(180) is formed on the data line and a first portion of the drain electrode. A pixel electrode(191) is formed on the gate insulating layer and a second portion of the drain electrode. The pixel electrode overlaps at least a portion of the storage capacitor conductor. |
