CONTACT HOLE FORMING METHOD AND MANUFACTURING METHOD OF THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a contact hole forming method by which an etching ratio can be controlled, the contact hole forming method preventing an oxidation of a metal wiring located at a position under a contact hole, and a manufacturing method of a thin-film transistor substrate using such contact hole forming methods. SOLUTION: These methods are a contact hole forming method by a dry etching method and a manufacturing method of a thin-film transistor substrate using the contact hole forming method. This contact hole forming method comprising: preparing a substrate on which a metal wiring comprising silver is formed; forming an insulating film on the whole surface of the substrate by a low temperature process; and exposing the metal wiring by etching a predetermined position of the insulating film by a dry etching using a oxygen-free gas containing a fluorine-containing gas and a nitrogen gas. COPYRIGHT: (C)2007,JPO&INPIT