| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses variations in a threshold voltage and an NBTI phenomenon and has improved transistor characteristics having a small junction leak current. SOLUTION: In the semiconductor device, a gate insulating film 22 and a gate electrode 23 are formed on an n-type semiconductor substrate 21. Then, a p-type extension region 24, and a p-type source/drain region 26 outside the p-type extension region 24 are formed on the semiconductor substrate 21 located at the side lower part of the gate electrode 23. Then silicide layers 27a, 27b are formed on the gate electrode 23, and the p-type source/drain region 26. Then, a fluorine-injected layer 25 is formed at both the ends of the gate insulating film 22, and at the surface section of the p-type extension region 24 and the p-type source/drain region 26 located between the gate electrode 23 and the silicide layer 27b. COPYRIGHT: (C)2007,JPO&INPIT
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