| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of forming an identical conductivity-type MIS transistor having at least two types of threshold voltages minutely and easily with improved controllability. SOLUTION: In the semiconductor device, a gate insulating film 14a and a gate electrode 15a are formed on a semiconductor substrate 11 surrounded by a groove-type element separation region 13 at a first p-type MIS transistor formation region Tp1. Then, an n-type threshold control diffusion layer 17a having a relatively shallow junction while both sides are held by p-type source/drain regions 16a is formed on the semiconductor substrate 11 directly below the gate electrode 15a. Conversely, a gate insulating film 14b and a gate electrode 15b are formed on the semiconductor substrate 11 surrounded by the groove type element separation region 13 at a second p-type MIS transistor formation region Tp2. Then, an n-type threshold control diffusion layer 17b having a relatively deep junction while both the sides are held by p-type source/drain regions 16b is formed on the semiconductor substrate 11 directly below the gate electrode 15b. COPYRIGHT: (C)2007,JPO&INPIT
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