| 摘要 |
A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes a photodiode region and a transistor region that have a first concentration and are formed on an active region of a first conductive type semiconductor substrate. Additionally, the CMOS image sensor includes a second conductive-type doping region that has a first depth and a second concentration, formed in the photodiode region and having a plurality of parallel, spaced apart portions (or bars) therein; and a high concentration first conductive-type doping region formed in the photodiode region having a second depth shallower than the first depth and a third concentration higher than the second concentration.
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