发明名称 3-LEVEL NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME
摘要 A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.
申请公布号 US2007025161(A1) 申请公布日期 2007.02.01
申请号 US20060460580 申请日期 2006.07.27
申请人 PARK KI-TAE;CHOI JUNG-DAL;JO SUNG-KYU 发明人 PARK KI-TAE;CHOI JUNG-DAL;JO SUNG-KYU
分类号 G11C7/10 主分类号 G11C7/10
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