发明名称 |
Manufacturing method of semiconductor device |
摘要 |
A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.
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申请公布号 |
US2007026639(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060488890 |
申请日期 |
2006.07.19 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
NOMA TAKASHI;SHINOGI HIROYUKI;SUZUKI AKIRA;SEKI YOSHINORI;KUHARA KOICHI;TAKAO YUKIHIRO;YAMADA HIROSHI |
分类号 |
H01L21/44;H01L21/68;H01L21/768;H01L23/31;H01L23/48;H01L23/485 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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