发明名称 Manufacturing method of semiconductor device
摘要 A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.
申请公布号 US2007026639(A1) 申请公布日期 2007.02.01
申请号 US20060488890 申请日期 2006.07.19
申请人 SANYO ELECTRIC CO., LTD. 发明人 NOMA TAKASHI;SHINOGI HIROYUKI;SUZUKI AKIRA;SEKI YOSHINORI;KUHARA KOICHI;TAKAO YUKIHIRO;YAMADA HIROSHI
分类号 H01L21/44;H01L21/68;H01L21/768;H01L23/31;H01L23/48;H01L23/485 主分类号 H01L21/44
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