发明名称 |
Method and structure for forming slot via bitline for MRAM devices |
摘要 |
A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask. |
申请公布号 |
US2007023806(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20050193660 |
申请日期 |
2005.07.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAIDIS MICHAEL C.;RADENS CARL;CLEVENGER LAWRENCE A.;DALTON TIMOTHY J.;HSU LOUIS L.;HON WONG KEITH K.;YANG CHIH-CHAO |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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