COMPOUND OXIDE FILM AND METHOD FOR MANUFACTURING SAME, AND DIELECTRIC MATERIAL, PIEZOELECTRIC MATERIAL, CAPACITOR, PIEZOELECTRIC ELEMENT AND ELECTRONIC DEVICE WHICH INCLUDE COMPOUND OXIDE FILM

摘要

A compound oxide film having high crystallinity is provided by forming a compound oxide film on the surface of a base body and baking the compound oxide film in an atmosphere gas having an oxygen partial pressure of 1×10^-3Pa or less at a temperature of 400°C or higher. A method for manufacturing such compound oxide film is also provided. Furthermore, a dielectric material and piezoelectric material including such compound oxide film, a capacitor and a piezoelectric element including such material, and an electronic device including such elements are provided.