HIGH FREQUENCY POWER AMPLIFIER

摘要

A high frequency power amplifier is provided to apply a low load or a short to a gate node by resonation of a resonant circuit in a secondary harmonic frequency of an operational frequency of a transistor. A high frequency power amplifier includes a multi finger type transistor(1), an input junction circuit(2), and a resonant circuit(4). The multi finger type transistor(1) connects electrically a plurality of transistor cells in parallel. The input junction circuit(2) is connected to a gate electrode of the plurality of transistor cells. The resonant circuit(4) is connected between the gate electrode of each transistor cell and the input junction circuit(2). The resonant circuit(4) applies a low load or a short to the gate node by resonating in a secondary harmonic frequency of an operational frequency of the transistor(1).