SOLUTION FOR WET TREATMENT OF HAFNIUM-CONTAINING MATERIAL, USE OF THE SOLUTION, AND WET TREATMENT METHOD

摘要

PROBLEM TO BE SOLVED: To provide a solution suitable for wet treatment of high dielectric-constant materials containing hafnium.

SOLUTION: A solution for wet treatment of a hafnium-containing layer such as HfO2, HfO2/Al2O3, HfO2/SiO2, HfSiOx or HfAlOx, etc. is characterized by containing hydrofluoric acid and at least one substance that is an organic substance with low ionic strength and selected from a group comprising ethylene glycol, polyglycol, and acetate glycol.

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