| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element that ensures correct recording and enables information to be recorded and read easily and stably, even when a short pulse voltage is applied. <P>SOLUTION: A recording thin film 3 is formed between a first electrode 1 and a second electrode 4, and a memory element 10 contains any one from among elements Cu, Ag and Zn with its size as 70 nm or less, at a layer 2 containing at least oxygen and rare earth in the recording thin film 3 that is within or adjacent to the recording thin film 3. <P>COPYRIGHT: (C)2007,JPO&INPIT |
