| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wordline decoder of a non-volatile memory device. <P>SOLUTION: A wordline decoder reduces threshold voltage of a depression transistor in order to prevent a leakage current problem that occurs while a drive voltage of the non-volatile memory device drops. In addition, even if a VPP voltage is set lower than in the conventional practice, a voltage level of a block wordline as in the conventional practice can be obtained through a self-boosting. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
