| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a contact hole/interlayer insulating film, etc. which form the contact hole/interlayer insulating film, shorten and simplify the entire manufacturing process, reduce a cost, and use a dispersant or solvent which does not damage during the usage of organic semiconductor material without limiting a selection of insulating film material. SOLUTION: This forming method comprises the steps of: forming a low critical surface tension layer 3 on a first conductive material layer 1 to form a low critical surface tension part 3a by UV irradiation; forming a first insulating material layer 5 which has a higher critical surface tension than the low critical surface tension part 3a and does not affect a semiconductor layer, except the low critical surface tension part 3a, and thereafter forming a film of second insulating material on the first insulating material layer 5 to form a second insulating material layer 6; forming a hydrophobic material layer 9 on the second insulating material layer 6; and forming a high critical surface tension part 9b by the UV irradiation only on a region where a second conductive material layer in the hydrophobic material layer 9 is formed, and thereafter forming a second conductive material layer 7. COPYRIGHT: (C)2007,JPO&INPIT |
