| 摘要 |
A method for manufacturing a semiconductor device is provided to reduce the width of a gate electrode without the generation of a short channel effect by using a double spacer structure. A first insulating layer(110a) and a dummy gate electrode are sequentially formed on a semiconductor substrate(100). A lightly doped region is formed in the resultant structure by using the dummy gate electrode as an ion implantation mask. A first spacer(150) is formed at both sidewalls of the dummy gate electrode. Then, a heavily doped region is formed in the resultant structure. A second insulating layer is formed on the substrate corresponding to the heavily doped region. The dummy gate electrode is removed. A second spacer(180) is formed at sidewalls of the dummy gate removed portion. The first insulating layer and the substrate are selectively removed from the resultant structure by etching.
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