| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a single-wall carbon nanotube at a low temperature for obtaining a good quality single-wall carbon nanotube containing only a small amount of impurities. <P>SOLUTION: The method for growing a single-wall carbon nanotube comprises the steps of providing a vacuum chamber, providing a substrate with a catalyst metal deposited thereon in the vacuum chamber, vaporizing H<SB>2</SB>O so that it is supplied to the vacuum chamber, generating H<SB>2</SB>O plasma discharge in the vacuum chamber, and supplying a source gas into the vacuum chamber to grow the carbon nanotube on the substrate in a H<SB>2</SB>O plasma atmosphere. <P>COPYRIGHT: (C)2007,JPO&INPIT |
