LITHOGRAPHY SIMULATION METHOD, MASK PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To predict a finish dimension into which dimensional changes in a semiconductor lithographic process are incorporated with high accuracy at a high speed.

SOLUTION: A degree of denseness between a pattern as an object of prediction and a pattern in the surrounding area in a region of a substrate surface is calculated from design data; and according to the calculated degree of denseness, a relative positional relation between an intensity distribution curve of energy rays constituting a latent image and a referential intensity line to specify an edge position of the object pattern for prediction is locally changed in at least a part corresponding to the above object pattern for prediction.

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