| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature detecting circuit having a stable output characteristic not being affected by manufacturing variations in mobility, and temperature dependencies in a temperature detecting means using MOS transistors. SOLUTION: The circuit is so configured that a pair of depletion-type transistors M1, M2 of the same conductivity type formed into different channel sizes are connected in series between power sources Vdd, Vss, the gate and the source of the first transistor M1 are connected to each other, its drain are connected to the first power source Vdd, the gate and drain of the second transistor M2 are connected to each other, and its source is connected to the second power source Vss respectively. A voltage proportional to temperature is outputted from the junction point between the source of the first transistor M1 and the drain of the second transistor M2. COPYRIGHT: (C)2007,JPO&INPIT |
