| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive element having no deterioration of characteristics such as the deterioration of MR characteristics by the increase of a series resistance for a heat treatment process in an element manufacturing process. SOLUTION: The magnetoresistive element is used having an antiferromagnetic-substance layer 3, a fixed ferromagnetic-substance layer 11, a first non-magnetic substance layer 7, a free ferromagnetic-substance layer 8, and a first oxide layer 5. The antiferromagnetic-substance layer 3 is formed on the upper surface side of a substrate 1. The fixed ferromagnetic-substance layer 11 is formed on the antiferromagnetic-substance layer 3. The first non-magnetic substance layer 7 is formed on the fixed ferromagnetic-substance layer 11. The free ferromagnetic-substance layer 8 is formed on the first non-magnetic substance layer 7. The first oxide layer 5 is formed between the antiferromagnetic-substance layer 3 and the first non-magnetic substance layer 7 as a conductive material in a stoichiometric composition, and has a feature of a ferromagnetic substance or an antiferromagnetic substance at a temperature lower than a room temperature. COPYRIGHT: (C)2007,JPO&INPIT
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