发明名称 METHOD FOR MANUFACTURING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal, by which a high quality single crystal wherein a desired defect area is formed in the crystal growth direction can be easily manufactured with a high productivity and yield by suppressing the fluctuation of the temperature gradient in the vicinity of the solid-liquid interface to be minimum when the single crystal is grown. SOLUTION: In the method for manufacturing the single crystal by a horizontal magnetic field application Czochralski method comprising pulling the single crystal from a raw material melt in a chamber while applying a horizontal magnetic field to the melt in a crucible, when the crystal is pulled out while controlling the ratio F/Gc (mm<SP>2</SP>/°C×min) of the pulling speed F(mm/min) to the crystal temperature gradient Gc(°C/mm) in the vicinity of the solid-liquid interface in the central part of the crystal so that the single crystal being pulled becomes desired defect area, the set value of magnetic field intensity B(T ) to be applied to the melt is changed according to the magnitude of the crystal temperature gradient Gc(°C/mm) in the vicinity of the solid-liquid interface in the central part of the crystal. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007022825(A) 申请公布日期 2007.02.01
申请号 JP20050204313 申请日期 2005.07.13
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 SAKURADA MASAHIRO;IIDA MAKOTO;FUSEGAWA IZUMI
分类号 C30B29/06;C30B15/20 主分类号 C30B29/06
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