| 摘要 |
A semiconductor device-composing substrate 10 has a support base 12 , an interconnect layer 14 including interconnects 13 , and an insulating resin layer 16 . The semiconductor device-composing substrate 10 also has a mounting region D 1 on which a semiconductor chip 30 is to be mounted. The insulating resin layer 16 is formed on the interconnect layer 14 . Chip-connecting electrodes 17 , external electrode pads 18 and the resin stopper patterns 19 are formed in the insulating resin layer 16 . The chip-connecting electrodes 17 are provided in the mounting region D 1 . The external electrode pads 18 are provided outside the mounting region D 1 . The resin stopper patterns 19 are provided between the mounting region D 1 and the external electrode pads 18.
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