摘要 |
This invention provides an AlN crystal, which can be applied to various semiconductor devices, has a large diameter, and has good crystallinity, and a method for growing the same and an AlN crystal substrate. The method for growing an AlN crystal comprises growing an AlN crystal (4) on a seed crystal substrate (2) disposed within a crystal growth chamber (24) in a crystal growth container (12) provided within a reaction vessel by vapor growth and is characterized in that, in the growth of the crystal, a carbon-containing gas is fed into a crystal growth chamber (24). |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;MIZUHARA, NAHO;MIYANAGA, MICHIMASA;KAWASE, TOMOHIRO;FUJIWARA, SHINSUKE |
发明人 |
MIZUHARA, NAHO;MIYANAGA, MICHIMASA;KAWASE, TOMOHIRO;FUJIWARA, SHINSUKE |