| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its control method which suppresses the power leak from a switch to improve the on-resistance. <P>SOLUTION: The semiconductor device has transmitting switches 10, 20 having a plurality of FET connected in series between input terminals Tx1, Tx2 connected to a transmitter and terminals At1, At2 connected to a common connection point; the gate of each FET being connected to a transmitting drive circuit. The device has receiving switches 30, 40 having a plurality of FET connected in series between input terminals Rx1, Rx2 connected to a transmitter and terminals Ar1, Ar2 connected to a common connection point; the gate of each FET being connected to a receiving drive circuit. It further has a booster circuit 80 for generating a positive or negative boost voltage, based on a specified power source. With the transmitting switches being in a conductive state, the boost voltage is applied to the FET of the receiving switches as a potential for turning the receiving switches to a nonconductive state. <P>COPYRIGHT: (C)2007,JPO&INPIT |
