| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a MOS transistor with improved mobility. <P>SOLUTION: A step of forming a tensile channel region in a semiconductor device is included. In one form, a step of straining a stress layer covering an amorphous portion of the semiconductor device in the intermediate stage of manufacture is included. The semiconductor device is masked, and the strain in a part of the stress layer is relaxed. The strain from the stress layer is conveyed to the substrate by recrystallizing the amorphous portion of the semiconductor device in the middle of manufacture. At least a part of strain remains on the substrate during the manufacturing step of the device. Consequently, the performance of the completed device can be improved. In the other form, the tensile stress layer is formed to cover the first portion of the device, and the compressive stress layer is formed to cover the second portion of the device. The tensile stress layer forms the compressive channel in a PMOS device, and the compressive stress layer forms the tensile channel in an NMOS device. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
