| 摘要 |
PROBLEM TO BE SOLVED: To protect a semiconductor element under fabrication against impact of auto-doping from a scribe line portion in the process for fabricating a semiconductor device. SOLUTION: A step for forming a P type buried layer preceding a step for forming an N type epitaxial layer by growing an N type epitaxial layer is carried out for a portion where a scribe line is formed while masking that portion by a resist film 81A formed on an oxide film or by utilizing an oxide film 90A itself. The step for forming an N type epitaxial layer is carried out on the surface of an N type buried layer 51 for a portion where a scribe line is formed. COPYRIGHT: (C)2007,JPO&INPIT |
