| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor substrate and a manufacturing method of a semiconductor device to simultaneously compensate a fault at the time of using a silicon oxide film as a support and a fault at the time of using a silicon nitride film as the support. SOLUTION: There are included the steps of: sequentially forming an SiGe layer 11, an Si layer 13, an SiGe layer 15, and an Si layer 17 on an Si substrate; forming a hole for exposing an Si substrate 1 on these layers; forming on the Si substrate 1 a support 30 supporting the Si layers 13, 17 on the Si substrate 1, so that the hole may be embedded and the Si layer 17 may be covered; forming an opening surface for exposing a part of edges of the SiGe layers 11, 15 on the support 30; forming a cavity under the Si layers 13, 17 by etching the SiGe layers 11, 15 through this opening surface; and forming a buried oxide film in the cavity portion. The support 30 comprises a film of a laminated structure equipped with a Si<SB>3</SB>N<SB>4</SB>film 31 and a SiO<SB>2</SB>film 33. COPYRIGHT: (C)2007,JPO&INPIT
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