| 摘要 |
PROBLEM TO BE SOLVED: To provide a sense amplifier circuit capable of properly performing readout even when ternary signals of H, M, and L levels are stored in a memory cell by a power supply of 1 V. SOLUTION: The ternary memory circuit is provided with the sense amplifier circuits including: an amplification part amplifying an electric potential of a bit line connected to the memory cell; a first sampling and holding part storing the electric potential amplified by the amplification part in a first capacitor by a first sampling pulse when the bit line is made into a reset electric potential; a second sampling and holding part storing the electric potential amplified by the amplification part in a second capacitor by a second sampling pulse when the bit line is made into a readout electric potential by the memory cell; and a latch circuit detecting and latching the electric potential difference stored in the first and second capacitors, for detecting H and L levels, respectively. COPYRIGHT: (C)2007,JPO&INPIT
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