| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method for producing a zirconium nitride film, which is free from disadvantages of conventional technology. SOLUTION: In the method for producing the zirconium nitride film from reactive gas by a chemical vapor deposition method on the surface of a substrate, zirconium tetrakis (dialkylamide) of formula (1) (wherein R<SP>1</SP>and R<SP>2</SP>are identical to or different from each other and are each a straight-chain or branched 1-4C alkyl group) is used as a zirconium precursor, and a hydrazine derivative of formula (2) (wherein R<SP>3</SP>is a straight-chain or branched 1-4C alkyl group; and R<SP>4</SP>is hydrogen or a 1-4C alkyl group) is used as the reactive gas. COPYRIGHT: (C)2007,JPO&INPIT
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