| 摘要 |
A plasma etching apparatus is provided to remove particles and a thin film in an end region of a substrate by avoiding generation of plasma in a region except the edge of the substrate through a shield part and a substrate support unit and by generating plasma of a high density by a discharge of inductively coupled plasma. A substrate support part(30) is positioned in a chamber(10) to support a substrate(20). Shield parts(40) are disposed on the substrate at an interval that plasma is not generated, exposing the end part of the substrate. An antenna(53) applies plasma power to a region between the end part of the substrate and the inner wall of the chamber, disposed in a part of the outer wall of the chamber. A bias applying part(60) applies a bias to the substrate support part. The substrate support part has the same diameter as the shield part, exposing the lower end region of the substrate.
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