发明名称 SEMICONDUCTOR DEVICE HAVING PROTECTION FUNTION OF ELECTROSTATIC DISCHARGE
摘要 A semiconductor device having a protection function for ESD is provided to protect an inner circuit of a semiconductor device from an overvoltage caused by static electricity when an arc discharge caused by static electricity is generated in the periphery of an NC(no-connection) ball by forming an NC pad having an ESD protection circuit and by connecting the NC ball to the NC pad. An NC pad(36) is formed on a package. The NC pad is connected to at least one NC ball of a semiconductor device. An ESD protection circuit is formed on the NC pad, composed of a first diode(40) connected between the NC pad and a power supply(VDD) and a second diode(42) connected between the NC pad and a ground potential(VSS). The NC ball can be connected to a PCB.
申请公布号 KR20070014674(A) 申请公布日期 2007.02.01
申请号 KR20050069508 申请日期 2005.07.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JOO HERN;SEOL, HEE SOO;JEON, JAE EUN
分类号 H01L27/04 主分类号 H01L27/04
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