| 摘要 |
Disclosed are a transistor and a method for forming the same. The present transistor comprises: a groove formed in a semiconductor substrate; a couple of first sidewall spacers formed in inner sidewalls of the groove, protruding over the substrate; a gate electrode formed between the first sidewall spacers; a gate insulating layer interposed between the gate electrode and the substrate; and source and drain regions formed in the substrate beside the groove.
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