发明名称 Method of forming non-conformal layers
摘要 In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface
申请公布号 US2007026540(A1) 申请公布日期 2007.02.01
申请号 US20060375588 申请日期 2006.03.13
申请人 NOOTEN SEBASTIAN E V;MAES JAN W;MARCUS STEVEN;WILK GLEN;RAISANEN PETRI;ELERS KAI-ERIK 发明人 NOOTEN SEBASTIAN E.V.;MAES JAN W.;MARCUS STEVEN;WILK GLEN;RAISANEN PETRI;ELERS KAI-ERIK
分类号 H01L21/00;B05C11/00;C23C16/00;H01L21/31 主分类号 H01L21/00
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