发明名称 Monolithically integrated power IGBT device
摘要 A power IGBT device is monolithically integrated to include an input terminal suitable to receive an input voltage and an output terminal suitable to supply a current having a limited and predetermined highest value. Such IGBT device includes an IGBT power element inserted between said output terminal and a supply reference. The power element has a control terminal connected to the input terminal through a control circuit that includes at least a transistor inserted between the control terminal and the supply reference voltage and a resistive element inserted between the input terminal and the control terminal.
申请公布号 US2007024118(A1) 申请公布日期 2007.02.01
申请号 US20060438680 申请日期 2006.05.22
申请人 STMICROELECTRONICS S.R.L. 发明人 TORRES ANTONINO;SUERI STEFANO;PATTI DAVIDE
分类号 B60L1/00 主分类号 B60L1/00
代理机构 代理人
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