发明名称 |
Monolithically integrated power IGBT device |
摘要 |
A power IGBT device is monolithically integrated to include an input terminal suitable to receive an input voltage and an output terminal suitable to supply a current having a limited and predetermined highest value. Such IGBT device includes an IGBT power element inserted between said output terminal and a supply reference. The power element has a control terminal connected to the input terminal through a control circuit that includes at least a transistor inserted between the control terminal and the supply reference voltage and a resistive element inserted between the input terminal and the control terminal.
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申请公布号 |
US2007024118(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060438680 |
申请日期 |
2006.05.22 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
TORRES ANTONINO;SUERI STEFANO;PATTI DAVIDE |
分类号 |
B60L1/00 |
主分类号 |
B60L1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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