| 摘要 |
Provided are a method for fabricating a semiconductor device and a semiconductor device fabricated using the same. The method for fabricating a semiconductor device comprises forming gate stacks on a semiconductor substrate, forming gate spacers made of a dielectric material having a dielectric constant of 2 to 4, on the sides of the gate stacks, forming an interlayer dielectric film on the resulting structure and etching the interlayer dielectric film, thereby forming a landing plug contact hole, and filling the landing plug contact hole with a conductive material, thereby forming a landing plug contact. The semiconductor device fabricated according to the above-mentioned method comprises a semiconductor substrate, gate stacks formed on the predetermined regions of the semiconductor substrate, gate spacers formed on the sides of the gate stacks, an interlayer dielectric film formed on the gate stacks and semiconductor substrate, such that only the semiconductor substrate between gate stacks is exposed, and conductive landing plug contact filling the region from which the semiconductor substrate between the gate stacks is exposed.
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