| 摘要 |
A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided. An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11 , a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N 11 , an amplifier transistor 13 for outputting the signal of the floating node N 11 to a vertical signal line 22 , and a reset transistor 14 for resetting the floating node N 11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example -1V). |
