摘要 |
<p>Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.</p> |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KIM, HYUN-TAK;KANG, KWANG-YONG;KIM, BONG-JUN;LEE, YONG-WOOK;YUN, SUN-JIN;CHAE, BYUNG-GYU;KIM, GYUNG-OCK |
发明人 |
KIM, HYUN-TAK;KANG, KWANG-YONG;KIM, BONG-JUN;LEE, YONG-WOOK;YUN, SUN-JIN;CHAE, BYUNG-GYU;KIM, GYUNG-OCK |