| 摘要 |
<p>A semiconductor device is provided to avoid generation of stress and improve reliability by forming a device under an electrode pad. An interlayer dielectric(50,60,70,80,90) is formed on a semiconductor layer(10). A buffer layer(72,82,92) is formed on the interlayer dielectric. An electrode pad(94) is formed on the interlayer dielectric. The buffer layer two-dimensionally overlaps the end of at least a part of the electrode pad. The buffer layer can be formed in a predetermined range positioned outside of a vertical portion under the end of the electrode pad. The end of the buffer layer two-dimensionally overlaps the end of the electrode pad.</p> |
