Method for manufacturing semiconductor devices

摘要

A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al₂O₃ and a polysilicon or SiO₂ layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl₃, Ar, and CH₄ or He. The gas mixture further contains Cl₂. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO₂ layer are separately etched in different chambers.