发明名称 |
Semiconductor structure with improved on resistance and breakdown voltage performance |
摘要 |
In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches having doped regions of opposite or alternating conductivity types surrounding the trenches.
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申请公布号 |
US2007023855(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20050193724 |
申请日期 |
2005.08.01 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
HOSSAIN ZIA;TU SHANGHUI L. |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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