摘要 |
Connection structure ( 5 ) for attaching a semiconductor chip ( 2 ) to a metal substrate ( 4 ) is provided which has a plurality of electrically conducting layers ( 11, 12, 13, 14 ) arranged in a stack. The stack has a contact layer ( 11 ) for providing an ohmic contact to a semiconductor chip ( 2 ), at least one mechanical decoupling layer ( 12 ) for mechanically decoupling the semiconductor chip ( 2 ) and the metal substrate ( 4 ), at least one diffusion barrier layer ( 13 ) and a diffusion solder layer ( 14 ) for providing a diffusion soldered mechanical bond and an electrical connection to a metal substrate ( 4 ). The mechanical decoupling layer ( 12 ) is positioned in the stack between the diffusion barrier layer ( 13 ) and the contact layer ( 11 ).
|